high temperature process meaning in English
高温法
Examples
- Of industrial kilns and furnaces for metallurgical or other high temperature processes
冶金和其他高温工艺过程中工业窑炉 - Examples of advanced measurements and standards technologies in moderate to high temperature processes utilized by the semiconductor industry will be presented
介绍在元器件工业中温至高温的过程控制中使用先进的测量技术和标准技术的范例。 - 3 . to avoid the high temperature process in sige cmos technics , appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source
3 .研究了离子注入法形成sigehcmos的双阱及源漏工艺。确定了注入的离子类型、剂量、能量等关键参数。 - Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time , and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev , 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours , are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed , which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox . sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si , and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect . behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation , 600 is appropriate for the post - implantation treatment
Sige - simox工艺方面：首次采用硅( 100 )衬底上直接外延的100nm厚sige的样品中注入高剂量的o离子，通过退火处理成功制备了sige - oi新结构，即sige - simox工艺，证实了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )剂量的氧离子，随后在氧化层的保护下经1250 ， ar + 5 o _ 2气氛的高温退火( 5小时)过程，可以制备出sige - oi新型材料；实验中观察到退火过程中的ge损失现象，分析了其原因是ge挥发( ge通过表面氧化层以geo挥发性物质的形式进入退火气氛)和ge扩散( ge穿过离子注入形成的氧化埋层而进入si衬底中) ，其中ge扩散是主要原因；根据实验结果及实验中出现的问题，对下一步工作提出两个改进的方案：一是通过在si衬底中注入适量h ~ + / he ~ +形成纳米孔层来阻断ge扩散通路，二是可以通过控制表面氧化来调节安止额士淤丈捞要表面sige层中的ge组分，从而部分解决sige